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نمایش تعداد 1-10 از 10

Rinaldo Castello and the Analog-Design Environment in Pavia: A Success Story

نوع: Journal Paper

نویسنده : Baccarani, G.

ناشر: IEEE

سال: 2014

TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

نوع: Journal Paper

نویسنده : Baravelli, E.; Gnani, Elena; Gnudi, A.; Reggiani, S.; Baccarani, G.

ناشر: IEEE

سال: 2014

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs

نوع: Conference Paper

نویسنده : Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.

ناشر: IEEE

سال: 2014

A new discretization strategy of the semiconductor equations comprising momentum and energy balance

نوع: Journal Paper

نویسنده : Forghieri, A.; Guerrieri, R.; Ciampolini, P.; Gnudi, A.; Rudan, M.; Baccarani, G.

سال: 1988

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Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering

نوع: Journal Paper

نویسنده : Grassi, R.; Gnudi, A.; Imperiale, I.; Gnani, E.; Reggiani, S.; Baccarani, G.

ناشر: American Institute of Physics

سال: 2013

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Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

نوع: Journal Paper

نویسنده : Grassi, Roberto; Gnudi, A.; Di Lecce, Valerio; Gnani, Elena; Reggiani, S.; Baccarani, G.

ناشر: IEEE

سال: 2014

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

نوع: Journal Paper

نویسنده : Beneventi, Giovanni Betti; Gnani, Elena; Gnudi, A.; Reggiani, S.; Baccarani, G.

ناشر: IEEE

سال: 2014

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

نوع: Conference Paper

نویسنده : Di Lecce, V.; Grassi, R.; Gnudi, A.; Gnani, E.; Reggiani, S.; Baccarani, G.

ناشر: IEEE

سال: 2014

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime

نوع: Conference Paper

نویسنده : Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.

ناشر: IEEE

سال: 2014

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions

نوع: Conference Paper

نویسنده : Monti, F.; Reggiani, S.; Barone, G.; Gnani, E.; Gnudi, A.; Baccarani, G.; Poli, S.; Chuang, M.-Y.; Tian, W.; Varghese, D.; Wise, R.

ناشر: IEEE

سال: 2014

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Rinaldo Castello and the Analog-Design Environment in Pavia: A Success Story

TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs

A new discretization strategy of the semiconductor equations comprising momentum and energy balance

Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions

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Rinaldo Castello and the Analog-Design Environment in Pavia: A Success Story

TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs

A new discretization strategy of the semiconductor equations comprising momentum and energy balance

Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions