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RISDFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor
سال: 2018
خلاصه:
The chemical stability of graphene and graphdiyne means that they can be stacked in different combinations to produce a new nanotransistor for ultra-high frequency applications. Here we report a resonant tunneling transistor through a graphene...
A Comparitive Study of Predictive Models for Cloud Infrastructure Management
ناشر: IEEE
سال: 2014
A study of intents resolving for service discovery
ناشر: IEEE
سال: 2014
Design of tunneling field-effect transistor (TFET) with AlGaAs/InGaAs hetero-junction
سال: 2013
خلاصه:
In this paper a hetero-junction tunnel field effect transistor (HJ-TFET) with the channel length of 20 nm has been introduced and simulated in which the source/channel heterojunction is AlGaAs /InGaAs. With precise selection ...
Analysis and optimization of Tunnel FET with Band gap Engineering
سال: 2013
خلاصه:
in this paper a high performance double gate tunnel field effect transistor (DG-TFET) is proposed. Band gap engineering is achieved in order to improve the device performance. This novel TFET is formed from variable band ...
Introduction to Materiality of Information, Documents, and Work Minitrack
ناشر: IEEE
سال: 2014
Nontraditional Computation Using Beyond-CMOS Tunneling Devices
ناشر: IEEE
سال: 2014
High-performance 64-bit binary comparator
ناشر: IEEE
سال: 2014
Introduction to the Soft Computing and Intelligent Data Analysis Minitrack
ناشر: IEEE
سال: 2014