Comparison of Low Field Electron Transport in SiC and GaN Structures for High-Power and High-Temperature Device Modeling

In the present study, we investigate gas flow in a micro-/nanochannel by using the two relaxation time lattice Boltzmann equation (TRT-LBE). The wall function approach is employed in order to consider the effect of Knudsen layer in transition flow...

A new calculation method has been developed and used to model electron transport properties in

semiconductor devices under thermal and electrical applications. Using the relaxation-time

approximation, the Boltzmann transport equation...

temperature increases from 300 - 600 K. The low temperature value of electron mobility increases

significantly with increasing doping concentration. The iterative results are in fair agreement with other

recent calculations obtained using the relaxation-time...

agreement with other recent calculations obtained using

the relaxation-time approximation and experimental methods....

We propose a moving mesh adaptive approach for solving time-dependent partial differential equations. The motion of spatial grid points is governed by a moving mesh PDE (MMPDE) in which a mesh relaxation time τ is employed as a regularization...

a dynamic adaptive method for solving time-dependent differential

equations. The mesh velocities are governed by an equation in which a relaxation time is employed to

move nodes in such a way that they remain concentrated in regions...

In this study, gaseous flow through a micro/nano-channel is investigated via a novel two relaxation

time lattice Boltzmann method (TRT-LBM). In this method, the slip velocity at the fluid-solid

interface is ...