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نمایش تعداد 1-3 از 3

Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor

نوع: Conference Paper

نویسنده : Loo-Yau, J.R.

ناشر: IEEE

سال: 2014

Accelerating Curvature Estimate in 3D Seismic Data Using GPGPU

نوع: Conference Paper

نویسنده : Martins, Leonardo; Silva, Marco Aurelio Goncalves da; Arruda, Marcelo; Duarte, Joner; Silva, Pedro Mario; Seixas, Roberto Beauclair; Gattass, Marcelo

ناشر: IEEE

سال: 2014

High-voltage pulse-triggered SR latch level-shifter design considerations

نوع: Conference Paper

نویسنده : Larsen, Dennis Oland; Muntal, Pere Llimos; Jorgensen, Ivan H.H.; Bruun, Erik

ناشر: IEEE

سال: 2014

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Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor

Accelerating Curvature Estimate in 3D Seismic Data Using GPGPU

High-voltage pulse-triggered SR latch level-shifter design considerations

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Modeling parasitic capacitances in Gallium Nitride (GaN) FET transistor

Accelerating Curvature Estimate in 3D Seismic Data Using GPGPU

High-voltage pulse-triggered SR latch level-shifter design considerations