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نمایش تعداد 1-10 از 55

A Comparison of Different Means to Increase Daily Range of Electric Vehicles: The Potential of Battery Sizing, Increased Vehicle Efficiency and Charging Infrastructure

نوع: Conference Paper

نویسنده : Funke, Simon; Plotz, Patrick

ناشر: IEEE

سال: 2014

The scale of the magnetotail reconnecting current sheet in the presence of O+

نوع: Journal Paper

ناشر: American Geophysical Union

سال: 2014

Generalized natural mode expansion for arbitrary electromagnetic fields

نوع: Conference Paper

نویسنده : Dai, Q.I.; Chew, W.C.; Jiang, L.J.

ناشر: IEEE

سال: 2014

Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips

نوع: Journal Paper

نویسنده : Chia-Hsiang Chen; Knag, Phil; Zhengya Zhang

ناشر: IEEE

سال: 2014

SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study

نوع: Journal Paper

نویسنده : Danilov, Igor /A/.; Gorbunov, Maxim S.; Antonov, A.A.

ناشر: IEEE

سال: 2014

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

نوع: Journal Paper

نویسنده : Zebrev, Gennady /I/.; Vatuev, Alexander S.; Useinov, Rustem G.; Emeliyanov, Vladimir V.; Anashin, Vasily S.; Gorbunov, Maxim S.; Turin, Valentin O.; Yesenkov, Kirill /A/.

ناشر: IEEE

سال: 2014

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

نوع: Journal Paper

نویسنده : Privat, A.; Touboul, A.D.; Michez, A.; Bourdarie, S.; Vaille, J.R.; Wrobel, F.; Chatry, N.; Chaumont, G.; Lorfevre, E.; Bezerra, F.; Saigne, F.

ناشر: IEEE

سال: 2014

New Techniques for SET Sensitivity and Propagation Measurement in Flash-Based FPGAs

نوع: Journal Paper

نویسنده : Evans, Adrian; Alexandrescu, Dan; Ferlet-Cavrois, Veronique; Nicolaidis, Michael

ناشر: IEEE

سال: 2014

Towards a Generic Representation of Heavy Ion Tracks to be Used in Engineering SEE Simulation Tools

نوع: Journal Paper

نویسنده : Raine, M.; Gaillardin, M.; Paillet, P.; Duhamel, O.

ناشر: IEEE

سال: 2014

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

نوع: Journal Paper

نویسنده : Mizuta, Eiichi; Kuboyama, Satoshi; Abe, H.; Iwata, Yoshiyuki; Tamura, Takuya

ناشر: IEEE

سال: 2014

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A Comparison of Different Means to Increase Daily Range of Electric Vehicles: The Potential of Battery Sizing, Increased Vehicle Efficiency and Charging Infrastructure

The scale of the magnetotail reconnecting current sheet in the presence of O+

Generalized natural mode expansion for arbitrary electromagnetic fields

Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips

SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

New Techniques for SET Sensitivity and Propagation Measurement in Flash-Based FPGAs

Towards a Generic Representation of Heavy Ion Tracks to be Used in Engineering SEE Simulation Tools

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

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A Comparison of Different Means to Increase Daily Range of Electric Vehicles: The Potential of Battery Sizing, Increased Vehicle Efficiency and Charging Infrastructure

The scale of the magnetotail reconnecting current sheet in the presence of O+

Generalized natural mode expansion for arbitrary electromagnetic fields

Characterization of Heavy-Ion-Induced Single-Event Effects in 65&#x00A0;nm Bulk CMOS ASIC Test Chips

SET Tolerance of 65&#x00A0;nm CMOS Majority Voters: A Comparative Study

Microdose Induced Drain Leakage Effects in Power Trench MOSFETs: Experiment and Modeling

On the Use of Post-Irradiation-Gate-Stress Results to Refine Sensitive Operating Area Determination

New Techniques for SET Sensitivity and Propagation Measurement in Flash-Based FPGAs

Towards a Generic Representation of Heavy Ion Tracks to be Used in Engineering SEE Simulation Tools

Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs

Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips

SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study