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نمایش تعداد 1-10 از 12

Mobility Improvement Study for 8-Å-EOT HfO2 UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

نوع: Journal Paper

نویسنده : Trojman, Lionel; Ragnarsson, Lars-Ake; Collaert, Nadine

ناشر: IEEE

سال: 2014

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

نوع: Journal Paper

نویسنده : Majumdar, Angshul; Ko-Tao Lee; Cheng-Wei Cheng; Kuen-Ting Shiu; Sadana, Devendra K.; Leobandung, Effendi

ناشر: IEEE

سال: 2014

Improved Thermal Performance of SOI Using a Compound Buried Layer

نوع: Journal Paper

نویسنده : Baine, P.; Montgomery, John H.; Armstrong, B. Mervyn; Gamble, Harold S.; Harrington, Sarah J.; Nigrin, Sydney; Wilson, Richard; Oo, Kean B.; Armstrong, Alastair G.; Suder, Suli

ناشر: IEEE

سال: 2014

Virtual device for recovering the hand functions

نوع: Conference Paper

نویسنده : Paulet, Marius Valerian; Neacsu, Oana Maria; Salceanu, Alexandru

ناشر: IEEE

سال: 2014

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

نوع: Journal Paper

نویسنده : Ying-Tsung Chen; Chien-Ting Lin; Wen-Tai Chiang; Mon-Sen Lin; Chih-Wei Yang; Jian-Cun Ke; Shoou-Jinn Chang

ناشر: IEEE

سال: 2014

GPU-Based Computing of Repeated Range Queries over Moving Objects

نوع: Conference Paper

ناشر: IEEE

سال: 2014

3D software tool for reliability assessment based on three dimensional wiener process model considering big data on cloud computing

نوع: Conference Paper

نویسنده : Tamura, Y.; Yamada, S.

ناشر: IEEE

سال: 2014

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

نوع: Journal Paper

نویسنده : Chen-Chien Li; Kuei-Shu Chang-Liao; Li-Jung Liu; Tzu-Min Lee; Chung-Hao Fu; Ting-Ching Chen; Jen-Wei Cheng; Chun-Chang Lu; Tien-Ko Wang

ناشر: IEEE

سال: 2014

Investigation of LaAlO3/ZrO2/<italic>a</italic>-InGaZnO thin-film transistors using atmospheric pressure plasma jet

نوع: Journal Paper

نویسنده : Chien-Hung Wu; Hau-Yuan Huang; Shui-Jinn Wang; Kow-Ming Chang; Hsin-Yu Hsu

ناشر: IET

سال: 2014

An Ultralow EOT Ge MOS Device With Tetragonal HfO2 and High Quality Hf<italic>x</italic>Ge<italic>y</italic>O Interfacial Layer

نوع: Journal Paper

نویسنده : Chung-Hao Fu; Kuei-Shu Chang-Liao; Li-Jung Liu; Chen-Chien Li; Ting-Ching Chen; Jen-Wei Cheng; Chun-Chang Lu

ناشر: IEEE

سال: 2014

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Mobility Improvement Study for 8-Å-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Improved Thermal Performance of SOI Using a Compound Buried Layer

Virtual device for recovering the hand functions

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

GPU-Based Computing of Repeated Range Queries over Moving Objects

3D software tool for reliability assessment based on three dimensional wiener process model considering big data on cloud computing

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Investigation of LaAlO<sub>3</sub>/ZrO<sub>2</sub>/<italic>a</italic>-InGaZnO thin-film transistors using atmospheric pressure plasma jet

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

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Mobility Improvement Study for 8-&#x00C5;-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Improved Thermal Performance of SOI Using a Compound Buried Layer

Virtual device for recovering the hand functions

ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node

GPU-Based Computing of Repeated Range Queries over Moving Objects

3D software tool for reliability assessment based on three dimensional wiener process model considering big data on cloud computing

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Investigation of LaAlO<sub>3</sub>/ZrO<sub>2</sub>/<italic>a</italic>-InGaZnO thin-film transistors using atmospheric pressure plasma jet

An Ultralow EOT Ge MOS Device With Tetragonal HfO<sub>2</sub> and High Quality Hf<sub><italic>x</italic></sub>Ge<sub><italic>y</italic></sub>O Interfacial Layer

Mobility Improvement Study for 8-Å-EOT HfO<sub>2</sub> UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility