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نمایش تعداد 1-8 از 8

Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT

نوع: Journal Paper

نویسنده : Chia-Chun Lin; Yung-Hsien Wu; Chao-Yi Wu; Ching-Wei Lee

ناشر: IEEE

سال: 2014

Thermal noise of silicon based grating reflectors for high-precision metrology

نوع: Conference Paper

نویسنده : Kroker, S. , Kley, E.-B. , Tunnermann, A.

ناشر: IEEE

سال: 2014

Zn(O, S) Buffer Layers and Thickness Variations of CdS Buffer for Cu<formula formulatype="inline"> <img src="/images/tex/21117.gif" alt="_{2}"> </formula>ZnSnS<formula formulatype="inline"> <img src="/images/tex/616.gif" alt="_{4}"> </formula> Solar Cells

نوع: Journal Paper

نویسنده : Ericson, Tove; Scragg, Jonathan J.; Hultqvist, A.; Watjen, Jorn Timo; Szaniawski, P.; Torndahl, T.; Platzer-Bjorkman, Charlotte

ناشر: IEEE

سال: 2014

An Improvement of the Capacitance–Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

نوع: Journal Paper

نویسنده : Chun-Liang Zhong; Ruo-He Yao; Kui-Wei Geng

ناشر: IEEE

سال: 2014

Message from Ph.D Forum chairs

نوع: Conference Paper

نویسنده : Sen, Rijurekha , Kumar, K.Raj

سال: 2014

Interface-Barrier-Induced J–V Distortion of CIGS Cells With Sputtered-Deposited Zn(S,O) Window Layers

نوع: Journal Paper

نویسنده : Tao Song; McGoffin, J. Tyler; Sites, James R.

ناشر: IEEE

سال: 2014

Improved Performance of Amorphous InGaZnO Thin-Film Transistor With <inline-formula> <img src="/images/tex/17308.gif" alt="\\hbox {Ta}_{2}\\hbox {O}_{5}"> </inline-formula> Gate Dielectric by Using La Incorporation

نوع: Journal Paper

نویسنده : Qian, L.X.; Liu, X.Z.; Han, C.Y.; Lai, P.T.

ناشر: IEEE

سال: 2014

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

نوع: Journal Paper

نویسنده : Wing Man Tang; Aboudi, Uraib; Provine, J.; Howe, R.T.; Wong, H.-S Philip

ناشر: IEEE

سال: 2014

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Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT

Thermal noise of silicon based grating reflectors for high-precision metrology

Zn(O, S) Buffer Layers and Thickness Variations of CdS Buffer for Cu<formula formulatype="inline"> <img src="/images/tex/21117.gif" alt="_{2}"> </formula>ZnSnS<formula formulatype="inline"> <img src="/images/tex/616.gif" alt="_{4}"> </formula> Solar Cells

An Improvement of the Capacitance–Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

Message from Ph.D Forum chairs

Interface-Barrier-Induced J–V Distortion of CIGS Cells With Sputtered-Deposited Zn(S,O) Window Layers

Improved Performance of Amorphous InGaZnO Thin-Film Transistor With <inline-formula> <img src="/images/tex/17308.gif" alt="\\hbox {Ta}_{2}\\hbox {O}_{5}"> </inline-formula> Gate Dielectric by Using La Incorporation

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

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Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT

Thermal noise of silicon based grating reflectors for high-precision metrology

Zn(O, S) Buffer Layers and Thickness Variations of CdS Buffer for Cu<formula formulatype="inline"> <img src="/images/tex/21117.gif" alt="_{2}"> </formula>ZnSnS<formula formulatype="inline"> <img src="/images/tex/616.gif" alt="_{4}"> </formula> Solar Cells

An Improvement of the Capacitance&#x2013;Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

Message from Ph.D Forum chairs

Interface-Barrier-Induced J&#x2013;V Distortion of CIGS Cells With Sputtered-Deposited Zn(S,O) Window Layers

Improved Performance of Amorphous InGaZnO Thin-Film Transistor With <inline-formula> <img src="/images/tex/17308.gif" alt="\\hbox {Ta}_{2}\\hbox {O}_{5}"> </inline-formula> Gate Dielectric by Using La Incorporation

Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO<sub>2</sub> Gate Dielectric

An Improvement of the Capacitance–Voltage Method to Determine the Band Offsets in a-Si:H/c-Si Heterojunctions

Interface-Barrier-Induced J–V Distortion of CIGS Cells With Sputtered-Deposited Zn(S,O) Window Layers