Search

نمایش تعداد 1-10 از 18

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

نوع: Journal Paper

نویسنده : Okamoto, Dai; Sometani, Mitsuru; Harada, Shingo; Kosugi, Ryoji; Yonezawa, Yoshiyuki; Yano, Hiroyuki

ناشر: IEEE

سال: 2014

Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

نوع: Journal Paper

نویسنده : Cheol Hyoun Ahn; Myung Gu Yun; Sang Yeol Lee; Hyung Koun Cho

ناشر: IEEE

سال: 2014

Symmetric 100-Gb/s TWDM-PON with DSB OFDM modulation

نوع: Conference Paper

ناشر: IEEE

سال: 2014

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

نوع: Journal Paper

نویسنده : Majumdar, Angshul; Ko-Tao Lee; Cheng-Wei Cheng; Kuen-Ting Shiu; Sadana, Devendra K.; Leobandung, Effendi

ناشر: IEEE

سال: 2014

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method

نوع: Journal Paper

نویسنده : Mativenga, Mallory; Sungjin An; Suhui Lee; Jaegwang Um; Di Geng; Mruthyunjaya, Ravi K.; Heiler, Gregory N.; Tredwell, Timothy John; Jin Jang

ناشر: IEEE

سال: 2014

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

نوع: Journal Paper

نویسنده : Modic, Aaron; Gang Liu; Ahyi, Ayayi C.; Yuming Zhou; Pingye Xu; Hamilton, Michael C.; Williams, John R.; Feldman, L.C.; Dhar, Sudipta

ناشر: IEEE

سال: 2014

Towards Interoperability of Adaptive Social-Aware Routing at the Tactical Edge

نوع: Conference Paper

نویسنده : Gao, Wei; Patel, Mitesh

ناشر: IEEE

سال: 2014

Efficient method for moving object detection in cluttered background using Gaussian Mixture Model

نوع: Conference Paper

نویسنده : Yadav, Dileep Kumar

ناشر: IEEE

سال: 2014

Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs

نوع: Journal Paper

نویسنده : Zhaoyun Tang; Bo Tang; Lichuan Zhao; Guilei Wang; Jing Xu; Yefeng Xu; Hongli Wang; Dahai Wang; Junfeng Li; Fujiang Lin; Jiang Yan; Chao Zhao; Tianchun Ye

ناشر: IEEE

سال: 2014

Neural net based complete character recognition scheme for Bangla printed text books

نوع: Conference Paper

نویسنده : Hossain, S K Alamgir; Tabassum, Tamanna

ناشر: IEEE

سال: 2014

Search

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Symmetric 100-Gb/s TWDM-PON with DSB OFDM modulation

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Towards Interoperability of Adaptive Social-Aware Routing at the Tactical Edge

Efficient method for moving object detection in cluttered background using Gaussian Mixture Model

Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs

Neural net based complete character recognition scheme for Bangla printed text books

نویسنده

ناشر

سال

کلیدواژه

نوع

زبان

نوع محتوا

عنوان ناشر

Search

Filters

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Enhancement of Electrical Stability in Oxide Thin-Film Transistors Using Multilayer Channels Grown by Atomic Layer Deposition

Symmetric 100-Gb/s TWDM-PON with DSB OFDM modulation

A Four-FET Method for Extracting Mobility in FETs Without Field Oxide

Intrinsic Channel Mobility of Amorphous, In&#x2013;Ga&#x2013;Zn&#x2013;O Thin-Film Transistors by a Gated Four-Probe Method

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Towards Interoperability of Adaptive Social-Aware Routing at the Tactical Edge

Efficient method for moving object detection in cluttered background using Gaussian Mixture Model

Impacts of Back Gate Bias Stressing on Device Characteristics for Extremely Thin SoI (ETSoI) MOSFETs

Neural net based complete character recognition scheme for Bangla printed text books

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method