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RISIMPROVED PERFORMANCE OF 4H-SIC MESFETS USING MIDDLE RECESSED STRUCTURE WITH DUAL CHANNEL LAYER
سال: 2011
خلاصه:
A middle-recessed 4H-SiC metal semiconductor field effect transistors (MESFETs) with dual-channel layer was proposed and its electrical performances were studied by numerical device modeling. The higher doped lower-channel layer serves to increase...
HConfig: Resource adaptive fast bulk loading in HBase
ناشر: IEEE
سال: 2014
Energy-Aware Data Transfer Tuning
ناشر: IEEE
سال: 2014
A new approach to the use of parametric method of robot motion planning
ناشر: IEEE
سال: 2014
An improved optimization method of measurement matrix for compressed sensing
ناشر: IEEE
سال: 2014
High-frequency performance of AlGaN channel HEMTs with high breakdown voltage
ناشر: IET
سال: 2014