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نمایش تعداد 1-7 از 7

The Second Eye Movements Verification and Identification Competition

نوع: Conference Paper

نویسنده : Kasprowski, Pawel; Harezlak, Katarzyna

ناشر: IEEE

سال: 2014

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

نوع: Journal Paper

نویسنده : Sejin Hong; Suhui Lee; Mativenga, Mallory; Jin Jang

ناشر: IEEE

سال: 2014

High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

نوع: Journal Paper

نویسنده : Xiuling Li; Di Geng; Mativenga, Mallory; Jin Jang

ناشر: IEEE

سال: 2014

Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits

نوع: Journal Paper

نویسنده : Xiuling Li; Di Geng; Mativenga, Mallory; Yuanfeng Chen; Jin Jang

ناشر: IEEE

سال: 2014

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

نوع: Journal Paper

نویسنده : Seonghyun Jin; Tae-Woong Kim; Young-Gug Seol; Mativenga, Mallory; Jin Jang

ناشر: IEEE

سال: 2014

Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure

نوع: Journal Paper

نویسنده : Suhui Lee; Mativenga, Mallory; Jin Jang

ناشر: IEEE

سال: 2014

Research on the metering property of digital electricity meter

نوع: Conference Paper

نویسنده : Qi-xin Cai; Mei-mei Duan; Xiao-xing Mu; Jian Zhang

ناشر: IEEE

سال: 2014

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The Second Eye Movements Verification and Identification Competition

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure

Research on the metering property of digital electricity meter

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The Second Eye Movements Verification and Identification Competition

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure

Research on the metering property of digital electricity meter