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RISComparison of Transient Ballistic Electron Transport in Bulk Wurtzite Phase 6H-SiC and GaN
An ensemble Monte Carlo simulation is used to compare bulk electron ballistic transport
in 6H-SiC and GaN materials. Electronic states within the conduction band valleys at
Comparison of hot electron transport properties in wurtzite phase of ZnS, GaN and 6H-SiC
An ensemble Monte Carlo simulation have been carried out to study temperature and doping dependencies of electron drift velocity in ZnS, GaN and 6H-SiC. We study how electrons, initially in thermal equilibrium, drift under the action of an applied...
Steady-state and Transient Electron Transport Within Bulk III-V Nitride Semiconductors Using an Updated Semiclassical Three-valley Monte Carlo Method
An ensemble Monte Carlo simulation is used to compare high field electron transport in
bulk InN, AlN and GaN. For all materials, we find that electron velocity overshoot only
occurs when the electric field in increased to a value above...
Selective effects of weight and inertia on maximum lifting
The Transport Properties of InP Determined by a Monte Carlo Method in High Electric Field
Temperature and electron field–dependent electron transport in InP has been simulated using an ensemble Monte
Carlo and All dominant scattering procecess has been included in our calculations .our results show that ...