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A novel AlGaN/GaN HEMT with a p-layer in the barrier
سال: 2013
خلاصه:
The potentialimpactofgallium-nitride(GaN)highelectronmobilitytransistor(HEMT)withap-layerin
the barrierisreported.Weinvestigatethedeviceperformancefocusingonshortchanneleffects,gate–
drain capacitance,electric ...
Feature extraction with stacked autoencoders for epileptic seizure detection
ناشر: IEEE
سال: 2014