the drain under the gate. The length and thickness of the channel recess into the p-buffer layer are larger than the pbuffer recess into the channel. We call this new structure as Recessed PBuffer (RPB) SiC MESFET. The proposed structure has the narrower...

concentration under the gate improves the short channel effect such as DIBL. With varying NSS and NDS, the DC transconductance has a nonlinear variations. Also, simulation results demonstrate that NSS effects on the DC and RF characterization of SiC-MESFET...

-conductance, cut-off frequency, DC output conductance, drain current and breakdown voltage of the two structures, the source side-recessed p-buffer (SS-RPB) and drain side-recessed p-buffer (DS-RPB), are simulated and compared with the conventional recessed gate SiC...

of the proposed

structures are simulated and compared with the conventional

4H–SiC MESFET. Simulation results disclose that, compared to

the conventional structure, the structure with recessed full gate

and channel (FGC):

1...