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نمایش تعداد 1-10 از 46

Influence of the preparation conditions in the morphology and photoluminescence of CdS nanowires

نوع: Conference Paper

نویسنده : Zayas-Bazan, P.G.; Gutierrez Z.-B, K.; Santana, G.; Santoyo-Salazar, J.; Romero-Ibarra, J.E.; Contreras-Puente, G.; Hernandez, L.C.; Tamargo, M.; Gonzalez, J.C.; de Melo, O.

ناشر: IEEE

سال: 2014

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

نوع: Journal Paper

نویسنده : Sangheon Lee; Daeseok Lee; Jiyong Woo; Euijun Cha; Jaesung Park; Hyunsang Hwang

ناشر: IEEE

سال: 2014

1 GHz low-thermal microwaves effect on mitotic division of vegetal tissues

نوع: Conference Paper

نویسنده : Racuciu, Mihaela; Iftode, Cora; Miclaus, Simona

ناشر: IEEE

سال: 2014

A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD

نوع: Journal Paper

نویسنده : Chao Sun; Miyaji, K.; Johguchi, Koh; Takeuchi, Ken

ناشر: IEEE

سال: 2014

A new locally linear KNN method with an improved marginal Fisher analysis for image classification

نوع: Conference Paper

نویسنده : Qingfeng Liu; Liu, Chengjun

ناشر: IEEE

سال: 2014

A 60GHz transmitter in 40nm CMOS achieving mm-precision for discrete-carrier localization

نوع: Conference Paper

نویسنده : Indirayanti, P.; Ayhan, T.; Verhelst, M.; Dehaene, W.; Reynaert, P.

ناشر: IEEE

سال: 2014

Modeling of resistance in FinFET local interconnect

نوع: Conference Paper

نویسنده : Ning Lu; Kotecha, P.M.; Wachnik, R.A.

ناشر: IEEE

سال: 2014

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

نوع: Journal Paper

نویسنده : Stoliar, P.; Levy, P.; Sanchez, Maria Jesus; Leyva, A.G.; Albornoz, C.A.; Gomez-Marlasca, F.; Zanini, Anibal; Toro Salazar, C.; Ghenzi, N.; Rozenberg, M.J.

ناشر: IEEE

سال: 2014

NAND Flash Memory/ReRAM Hybrid Unified Solid-State-Storage Architecture

نوع: Journal Paper

نویسنده : Tanakamaru, Shuhei; Doi, M.; Takeuchi, Ken

ناشر: IEEE

سال: 2014

Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM

نوع: Journal Paper

نویسنده : Daeseok Lee; Jeonghwan Song; Jiyong Woo; Jaesung Park; Sangsu Park; Euijun Cha; Sangheon Lee; Yunmo Koo; Kibong Moon; Hyunsang Hwang

ناشر: IEEE

سال: 2014

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Influence of the preparation conditions in the morphology and photoluminescence of CdS nanowires

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

1 GHz low-thermal microwaves effect on mitotic division of vegetal tissues

A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD

A new locally linear KNN method with an improved marginal Fisher analysis for image classification

A 60GHz transmitter in 40nm CMOS achieving mm-precision for discrete-carrier localization

Modeling of resistance in FinFET local interconnect

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

NAND Flash Memory/ReRAM Hybrid Unified Solid-State-Storage Architecture

Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM

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Influence of the preparation conditions in the morphology and photoluminescence of CdS nanowires

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

1 GHz low-thermal microwaves effect on mitotic division of vegetal tissues

A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD

A new locally linear KNN method with an improved marginal Fisher analysis for image classification

A 60GHz transmitter in 40nm CMOS achieving mm-precision for discrete-carrier localization

Modeling of resistance in FinFET local interconnect

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

NAND Flash Memory/ReRAM Hybrid Unified Solid-State-Storage Architecture

Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM