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RISThroughput optimization for training-based large-scale virtual MIMO systems
Light Effect in photoionization of Traps in GaN MESFETs
Light Effect in photoionization of Traps in GaN MESFETs...
Electron transport simulation in bulk wurtzite ZnO and its nþ–n–nþ diode, compared with GaN
and compare the results with GaN. Our results show that ZnO’s
threshold field occurs at a higher applied electric field than GaN. Also, velocity overshoot in ZnO occurs
at higher electric fields, too. But the overshoot relaxation time is about 0...
Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications
We report on the quasi-monolithic integration of unpackaged high-power AlGaN/GaN HEMTs into a silicon basis, which finally will be the backbone and main part of an integrated circuit. III/V compound semiconductor devices fulfil special tasks which...
Content-aware planning models for information-centric networking
Effect of sapphire nitridation and group iii source flow rate ratio on in incorporation into InGaN grown by metalorganic vapor phase epitaxy
Gate length scaling effect on high electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures
Accurate Analytical Model for Current–Voltage and Small-Signal Characteristics of AlmGa1_mN/GaN Modulation-Doped Field-Effect Transistors
In this paper, a simple and accurate analytical model for current–voltage and small-signal characteristics of AlmGa1_mN/GaN modulation doped field-effect transistor (MODFET) devices is presented. For the charge control model, Fermi potential...