In the present work the effect of catalytic surface reaction on non-reactive bulk flow in micro-channel is

investigated. The reaction surface is analyzed with assumption of constant wall temperature. To solve this ...

In this paper, a two-dimensional (2D) analytical model of the surface potential variation along the channel in a fully depleted dual-gate (DG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is proposed...

Gate tunneling current of MOSFETs is an important factor in modeling ultra small devices. In this paper, gate tunneling in present generation MOSFETs is studied. In the proposed model, we calculate the electron wave function ...