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Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

Type: Conference Paper

Author : Jiongjiong Mo , Lind, E. , Wernersson, L.-E.

Publisher: IEEE

Year: 2014

InGaAs MOSFETs with InP drain

Type: Conference Paper

Author : Jiongjiong Mo , Lind, E. , Wernersson, L.-E.

Publisher: IEEE

Year: 2014

Time domain material characterizations using leaky lens antennas

Type: Conference Paper

Author : Vakili, I.; Ohlsson, L.; Gustafsson, M.; Wernersson, L.-E.

Publisher: IEEE

Year: 2014

High transconductance, f<inf>t</inf> and f<inf>max</inf> in In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using a novel fin formation technique

Type: Conference Paper

Author : Zota, C.B. , Wernersson, L.-E. , Lind, E.

Publisher: IEEE

Year: 2014

In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at V<inf>ds</inf> = 0.5 V

Type: Conference Paper

Author : Zota, C.B. , Wernersson, L.-E. , Lind, E.

Publisher: IEEE

Year: 2014

Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

Type: Journal Paper

Author : Zota, C.B.; Roll, G.; Wernersson, L.-E.; Lind, E.

Publisher: IEEE

Year: 2014

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

Type: Journal Paper

Author : Thelander, C.; FrobergFroberg, L.E.; Rehnstedt, C.; Samuelson, L.; Wernersson, L.-E.

Year: 2008

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Lessons from ten years of the international master's program in System-on-Chip

Type: Conference Paper

Author : land, H. , Tö rmanen, M. , Wernersson, L.-E. , Ö wall, V.

Publisher: IEEE

Year: 2014

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Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

InGaAs MOSFETs with InP drain

Time domain material characterizations using leaky lens antennas

High transconductance, f<inf>t</inf> and f<inf>max</inf> in In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using a novel fin formation technique

In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at V<inf>ds</inf> = 0.5 V

Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

Lessons from ten years of the international master's program in System-on-Chip

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Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

InGaAs MOSFETs with InP drain

Time domain material characterizations using leaky lens antennas

High transconductance, f<inf>t</inf> and f<inf>max</inf> in In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using a novel fin formation technique

In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/&#x03BC;m at V<inf>ds</inf> &#x003D; 0.5 V

Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate

Lessons from ten years of the international master's program in System-on-Chip

In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at V<inf>ds</inf> = 0.5 V