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Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Type: Journal Paper

Author : Weckx, Pieter; Kaczer, Ben; Toledano-Luque, Maria; Raghavan, Praveen; Franco, Jacopo; Roussel, P.J.; Groeseneken, Guido; Catthoor, Francky

Publisher: IEEE

Year: 2014

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability

Type: Journal Paper

Author : Toledano-Luque, Maria; Degraeve, Robin; Roussel, P.J.; Ragnarsson, Lars-Ake; Chiarella, T.; Horiguchi, Naoto; Mocuta, Anda; Thean, A.

Publisher: IEEE

Year: 2014

Superior Reliability of Junctionless pFinFETs by Reduced Oxide Electric Field

Type: Journal Paper

Author : Toledano-Luque, Maria; Matagne, Philippe; Sibaja-Hernandez, Arturo; Chiarella, T.; Ragnarsson, Lars-Ake; Soree, Bart; Cho, Moonju; Mocuta, Anda; Thean, A.

Publisher: IEEE

Year: 2014

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

Type: Journal Paper

Author : Baojun Tang; Weidong Zhang; Toledano-Luque, Maria; Jian Fu Zhang; Degraeve, Robin; Zhigang Ji; Arreghini, A.; Van den bosch, G.; Van Houdt, J.

Publisher: IEEE

Year: 2014

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-<inline-formula> <img src="/images/tex/19182.gif" alt="\\kappa "> </inline-formula> Intergate Dielectrics of Flash Memory Cells

Type: Journal Paper

Author : Baojun Tang; Wei Dong Zhang; Degraeve, Robin; Breuil, L.; Blomme, P.; Jian Fu Zhang; Zhigang Ji; Zahid, Mohammed; Toledano-Luque, Maria; Van den bosch, G.; Van Houdt, J.

Publisher: IEEE

Year: 2014

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Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability

Superior Reliability of Junctionless pFinFETs by Reduced Oxide Electric Field

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-<inline-formula> <img src="/images/tex/19182.gif" alt="\\kappa "> </inline-formula> Intergate Dielectrics of Flash Memory Cells

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Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent <inline-formula> <img src="/images/tex/18637.gif" alt="V_{\\rm TH}"> </inline-formula> Variability

Superior Reliability of Junctionless pFinFETs by Reduced Oxide Electric Field

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-<inline-formula> <img src="/images/tex/19182.gif" alt="\\kappa "> </inline-formula> Intergate Dielectrics of Flash Memory Cells