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Now showing items 1-7 of 7

Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction

Type: Conference Paper

Author : Kim, Younghyun; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

Strain-Modulated L-Valley Ballistic-Transport in (111) GaAs Ultrathin-Body nMOSFETs

Type: Journal Paper

Author : Alam, Khairul; Takagi, Shinichi; Takenaka, Mitsuru

Publisher: IEEE

Year: 2014

Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process

Type: Journal Paper

Author : Kim, W.-K.; Kuroda, K.; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Type: Journal Paper

Author : Rui Zhang; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<italic>x</italic>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Type: Journal Paper

Author : Rui Zhang; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

Type: Journal Paper

Author : Rui Zhang; Ju-Chin Lin; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Tunability

Type: Journal Paper

Author : Sang-Hyeon Kim; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masaharu; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

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Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction

Strain-Modulated L-Valley Ballistic-Transport in (111) GaAs Ultrathin-Body nMOSFETs

Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process

Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al<sub>2</sub>O<sub>3</sub>/GeO<sub>x</sub>/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Tunability

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Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction

Strain-Modulated L-Valley Ballistic-Transport in (111) GaAs Ultrathin-Body nMOSFETs

Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process

Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al<sub>2</sub>O<sub>3</sub>/GeO<sub>x</sub>/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Tunability