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Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Type: Journal Paper

Author : Wang, Lisa Ling; Liu, Tony Chi; Yuying Cai; Shengdong Zhang

Publisher: IEEE

Year: 2014

Separate Frame Compensated Current-Biased Voltage-Programmed Active Matrix Organic Light-Emitting Diode Pixel

Type: Journal Paper

Author : Chuanli Leng; Cuicui Wang; Longyan Wang; Shengdong Zhang

Publisher: IEEE

Year: 2014

Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

Type: Journal Paper

Author : Hongyu He; Yuan Liu; Binghui Yan; Xinnan Lin; Xueren Zheng; Shengdong Zhang

Year: 2017

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A floating high-voltage level shifter used in a pre-charge circuit for large-size AMOLED displays

Type: Journal Paper

Author : Fangfang Yang; Cuicui Wang; Hing-Mo Lam; Qiang Zhao; Jia Fan; Shengdong Zhang

Year: 2016

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Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

Type: Journal Paper

Author : Hongyu He; Yuan Liu; Binghui Yan; Xinnan Lin; Xueren Zheng; Shengdong Zhang

Year: 2016

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A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

Type: Journal Paper

Author : Longyan Wang; Lei Sun; Dedong Han; Yi Wang; Mansun Chan; Shengdong Zhang

Publisher: IEEE

Year: 2014

a-IGZO thin film transistors with channel layer deposited at room temperature and 250°C

Type: Conference Paper

Author : Wei Deng; Xin He; Xiang Xiao; Ling Wang; Weizhi Meng; Shengdong Zhang

Publisher: IEEE

Year: 2014

Lifetime prediction of TFT integrated gate drivers

Type: Conference Paper

Author : Wenjie Li; Congwei Liao; Xiang Xiao; Zhijin Hu; Junmei Li; Shengdong Zhang

Publisher: IEEE

Year: 2014

The influence of temperature on dynamic gate-bias stress instability in amorphous silicon thin film transistors

Type: Conference Paper

Author : Wen Yu; Wang, L.L.; Xiang Xiao; Wenjie Li; Shengdong Zhang

Publisher: IEEE

Year: 2014

A Multi-<inline-formula> <tex-math notation="LaTeX">$V_{mathrm {th}}$ </tex-math></inline-formula> a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions

Type: Journal Paper

Author : Xin He; Xiang Xiao; Yang Shao; Wei Deng; Chuanli Leng; Shengdong Zhang

Publisher: IEEE

Year: 2014

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Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Separate Frame Compensated Current-Biased Voltage-Programmed Active Matrix Organic Light-Emitting Diode Pixel

Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

A floating high-voltage level shifter used in a pre-charge circuit for large-size AMOLED displays

Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

a-IGZO thin film transistors with channel layer deposited at room temperature and 250°C

Lifetime prediction of TFT integrated gate drivers

The influence of temperature on dynamic gate-bias stress instability in amorphous silicon thin film transistors

A Multi-<inline-formula> <tex-math notation="LaTeX">$V_{mathrm {th}}$ </tex-math></inline-formula> a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions

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Thin-Film Transistor <inline-formula> <img src="/images/tex/21665.gif" alt="V_{\\rm th}"> </inline-formula> Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric

Separate Frame Compensated Current-Biased Voltage-Programmed Active Matrix Organic Light-Emitting Diode Pixel

Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

A floating high-voltage level shifter used in a pre-charge circuit for large-size AMOLED displays

Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

a-IGZO thin film transistors with channel layer deposited at room temperature and 250&#x00B0;C

Lifetime prediction of TFT integrated gate drivers

The influence of temperature on dynamic gate-bias stress instability in amorphous silicon thin film transistors

A Multi-<inline-formula> <tex-math notation="LaTeX">$V_{mathrm {th}}$ </tex-math></inline-formula> a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions

a-IGZO thin film transistors with channel layer deposited at room temperature and 250°C