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In this paper, the radio-frequency (RF) performances and small-signal parameters of double-gate (DG) square-shaped extended source tunneling field-effect transistors (TFETs) are investigated and compared with those of ...

RF modeling of p-n-p-n double-gate tunneling field-effect transistors

Type: Journal Paper

Author : Saeid Marjani; Seyed Ebrahim Hosseini

Year: 2014

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Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

Type: Journal Paper

Author : Saeid Marjani; Saeed Khosroabadi; Seyed Ebrahim Hosseini

Year: 2017

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Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

Type: Journal Paper

Author : Saeid Marjani; Saeed Khosroabadi; Seyed Ebrahim Hosseini

Year: 2017

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Design optimization of p-n-p-n tunneling field-effect transistor using III-V semiconductor materials

Type: Conference Paper

Author : Behnam, Dorostkar; Saeid, Marjani; Seyed Ebrahim, Hoseini

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Analysis of Ambient Temperature Effects on Efficiency Characteristics of InAsP/InGaAsP Multi Quantum Well BTJ-VCSELs

Type: Conference Paper

Author : Saeid, Marjani; Rahim, Faez; Behnam, Dorostkar

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DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters

Radio-frequency modeling of square-shaped extended source tunneling field-effect transistors

A novel double gate tunnel field effect transistor with 9 mV/dec average subthreshold slope

Analysis on Radio-Frequency Modeling of Double- and Single-Gate Square-Shaped Extended Source TFETs

RF modeling of p-n-p-n double-gate tunneling field-effect transistors

Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

Design optimization of p-n-p-n tunneling field-effect transistor using III-V semiconductor materials

Analysis of Ambient Temperature Effects on Efficiency Characteristics of InAsP/InGaAsP Multi Quantum Well BTJ-VCSELs

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DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters

Radio-frequency modeling of square-shaped extended source tunneling field-effect transistors

A novel double gate tunnel field effect transistor with 9 mV/dec average subthreshold slope

Analysis on Radio-Frequency Modeling of Double- and Single-Gate Square-Shaped Extended Source TFETs

RF modeling of p-n-p-n double-gate tunneling field-effect transistors

Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

Design optimization of p-n-p-n tunneling field-effect transistor using III-V semiconductor materials

Analysis of Ambient Temperature Effects on Efficiency Characteristics of InAsP/InGaAsP Multi Quantum Well BTJ-VCSELs