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Using pMOS Pass-Gates to Boost SRAM Performance by Exploiting Strain Effects in Sub-20-nm FinFET Technologies

Type: Journal Paper

Author : Royer, Pablo; Lopez-Vallejo, Marisa

Publisher: IEEE

Year: 2014

A tool for the automatic analysis of single events effects on electronic circuits

Type: Conference Paper

Author : Garcia-Redondo, Fernando; Lopez-Vallejo, Marisa; Royer, Pablo; Agustin, Javier

Publisher: IEEE

Year: 2014

Four-injector variability modeling of FinFET predictive technology models

Type: Conference Paper

Author : Royer, Pablo; Lopez-Vallejo, Marisa; Redondo, Fernando Garcia; Lopez Barrio, Carlos A.

Publisher: IEEE

Year: 2014

Implementation tradeoffs of triangle traversal algorithms for graphics processing

Type: Conference Paper

Author : Royer, Pablo; Ituero, Pablo; Lopez-Vallejo, Marisa; Barrio, Carlos A.Lopez

Publisher: IEEE

Year: 2014

Author

Lopez-Vallejo, Marisa (4)

Royer, Pablo (4)

Agustin, Javier (1)

Barrio, Carlos A.Lopez (1)

Garcia-Redondo, Fernando (1)

Ituero, Pablo (1)

Lopez Barrio, Carlos A. (1)

Redondo, Fernando Garcia (1)

Publisher

IEEE (4)

Year

2014 (4)

Keywords

6T complementary SRAM cells (1)

8T SRAM cells (1)

Accuracy (1)

adaptive antenna arrays (1)

Arrays (1)

cache storage (1)

Complementary SRAM (1)

CSRAM (1)

fin strain impact (1)

fin-shaped field-effect-transistor (FinFET) (1)

Type

Conference Paper (3)

Journal Paper (1)

Language (ISO)

English (4)

Content Type

Metadata Only (4)

Publication Title

MOS Variability (VARI), 2014 5th European Workshop on (2)

esign of Circuits and Integrated Circuits (DCIS), 2014 Conference on (1)

Nanotechnology, IEEE Transactions on (1)

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