High-performance of Al0.3Ga0.7N/GaN high electron-mobility transistors (HEMTs) with 1µm gate length are investigated by TCAD. The device exhibit a transconductance of about 110 ms/mm at VDS=9 V and a minimum noise figure ...

In this paper, simulative study on the effects of lattice temperature on a GaInP/6H-SiC strained quantum-well (QW) laser\\'s device is presented. Loss mechanisms are severe in the edge-emitting lasers. As a consequence, ...