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Implementation of precedence walking assistance mechanism in exoskeleton with only vertical ground reaction forces

Type: Journal Paper

Author : Cha, D.; Oh, Sung-Min; Kim, Kwang In; Kim, Kyu-Sang; Kim, Sungho

Publisher: IET

Year: 2014

Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO<sub>2</sub>/a-InGaZnO/SiO<sub>2</sub> Stack

Type: Journal Paper

Author : Oh, Sung-Min; Ju Heyuck Baeck; Hyun Soo Shin; Jong Uk Bae; Kwon-Shik Park; In Byeong Kang

Publisher: IEEE

Year: 2014

Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs

Type: Journal Paper

Author : Hagyoul Bae; Hyojoon Seo; Sungwoo Jun; Hyunjun Choi; Jaeyeop Ahn; Junseok Hwang; Jungmin Lee; Oh, Sung-Min; Jong-Uk Bae; Sung-Jin Choi; Dae Hwan Kim; Dong Myong Kim

Publisher: IEEE

Year: 2014

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Implementation of precedence walking assistance mechanism in exoskeleton with only vertical ground reaction forces

Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO<sub>2</sub>/a-InGaZnO/SiO<sub>2</sub> Stack

Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs

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Implementation of precedence walking assistance mechanism in exoskeleton with only vertical ground reaction forces

Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO<sub>2</sub>/a-InGaZnO/SiO<sub>2</sub> Stack

Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs