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Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure

Type: Journal Paper

Author : Suhui Lee; Mativenga, Mallory; Jin Jang

Publisher: IEEE

Year: 2014

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

Type: Journal Paper

Author : Sejin Hong; Suhui Lee; Mativenga, Mallory; Jin Jang

Publisher: IEEE

Year: 2014

High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

Type: Journal Paper

Author : Xiuling Li; Di Geng; Mativenga, Mallory; Jin Jang

Publisher: IEEE

Year: 2014

Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits

Type: Journal Paper

Author : Xiuling Li; Di Geng; Mativenga, Mallory; Yuanfeng Chen; Jin Jang

Publisher: IEEE

Year: 2014

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Type: Journal Paper

Author : Seonghyun Jin; Tae-Woong Kim; Young-Gug Seol; Mativenga, Mallory; Jin Jang

Publisher: IEEE

Year: 2014

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method

Type: Journal Paper

Author : Mativenga, Mallory; Sungjin An; Suhui Lee; Jaegwang Um; Di Geng; Mruthyunjaya, Ravi K.; Heiler, Gregory N.; Tredwell, Timothy John; Jin Jang

Publisher: IEEE

Year: 2014

Infinite Output Resistance of Corbino Thin-Film Transistors With an Amorphous-InGaZnO Active Layer for Large-Area AMOLED Displays

Type: Journal Paper

Author : Mativenga, Mallory; Su Hwa Ha; Di Geng; Dong Han Kang; Mruthyunjaya, Ravi K.; Heiler, Gregory N.; Tredwell, Timothy John; Jin Jang

Publisher: IEEE

Year: 2014

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Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method

Infinite Output Resistance of Corbino Thin-Film Transistors With an Amorphous-InGaZnO Active Layer for Large-Area AMOLED Displays

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Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure

Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving

High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits

Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation Amorphous-InGaZnO TFTs

Intrinsic Channel Mobility of Amorphous, In&#x2013;Ga&#x2013;Zn&#x2013;O Thin-Film Transistors by a Gated Four-Probe Method

Infinite Output Resistance of Corbino Thin-Film Transistors With an Amorphous-InGaZnO Active Layer for Large-Area AMOLED Displays

Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method