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    High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate 

    Type: Journal Paper
    Author : Arulkumaran, S.; Ranjan, Kunal; Ng, G.I.; Manoj Kumar, C.M.; Vicknesh, S.; Dolmanan, S.B.; Tripathy, Somanath
    Publisher: IEEE
    Year: 2014

    High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure 

    Type: Journal Paper
    Author : Qian Qian Meng; Hong Wang; Chong Yang Liu; Kian Siong Ang; Xin Guo; Bo Gao; Yang Tian; Manoj Kumar, C.M.; Jianjun Gao
    Publisher: IEEE
    Year: 2014

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