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Silicon nitride stop layer in back-end-of-line planarization for wafer bonding application

Type: Conference Paper

Author : Lisker, M.; Trusch, A.; Kruger, A.; Fraschke, M.; Tillack, B.; Weimann, N.; Ostermay, I.; Kruger, O.

Publisher: IEEE

Year: 2014

About the application of CMP for Monolithic integration of photonic components in a 0.25 μm BiCMOS process

Type: Conference Paper

Author : Trusch, A.; Lisker, M.; Yamamoto, Y.; Kruger, A.; Lischke, S.; Knoll, D.; Tillack, B.

Publisher: IEEE

Year: 2014

Monolithic integration of photonic devices in SiGe BiCMOS

Type: Conference Paper

Author : Zimmermann, L.; Knoll, D.; Lischke, S.; Petousi, D.; Kroh, M.; Winzer, G.; Heinemann, B.; Ostrovskyy, P.; Micusik, D.; Lisker, M.; Fursenko, O.; Marschmeyer, S.; Yamamoto, Y.; Voigt, K.; Wohlfeil, B.; Tillack, B.; Petermann, K.

Publisher: IEEE

Year: 2014

A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology

Type: Journal Paper

Author : Hossain, M.; Kraemer, T.; Ostermay, Ina; Jensen, T.; Janke, B.; Borokhovych, Y.; Lisker, M.; Glisic, Savo; Elkhouly, Mohamed; Borngraeber, J.; Tillack, Bernd; Meliani, Chafik; Krueger, O.; Krozer, V.; Heinrich, Wolfgang

Publisher: IEEE

Year: 2014

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Silicon nitride stop layer in back-end-of-line planarization for wafer bonding application

About the application of CMP for Monolithic integration of photonic components in a 0.25 μm BiCMOS process

Monolithic integration of photonic devices in SiGe BiCMOS

A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology

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Silicon nitride stop layer in back-end-of-line planarization for wafer bonding application

About the application of CMP for Monolithic integration of photonic components in a 0.25 &#x03BC;m BiCMOS process

Monolithic integration of photonic devices in SiGe BiCMOS

A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology

About the application of CMP for Monolithic integration of photonic components in a 0.25 μm BiCMOS process