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Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

Type: Conference Paper

Author : Jiongjiong Mo , Lind, E. , Wernersson, L.-E.

Publisher: IEEE

Year: 2014

InGaAs MOSFETs with InP drain

Type: Conference Paper

Author : Jiongjiong Mo , Lind, E. , Wernersson, L.-E.

Publisher: IEEE

Year: 2014

High transconductance, f<inf>t</inf> and f<inf>max</inf> in In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using a novel fin formation technique

Type: Conference Paper

Author : Zota, C.B. , Wernersson, L.-E. , Lind, E.

Publisher: IEEE

Year: 2014

In<inf>0.63</inf>Ga<inf>0.37</inf>As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at V<inf>ds</inf> = 0.5 V

Type: Conference Paper

Author : Zota, C.B. , Wernersson, L.-E. , Lind, E.

Publisher: IEEE

Year: 2014

Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

Type: Journal Paper

Author : Zota, C.B.; Roll, G.; Wernersson, L.-E.; Lind, E.

Publisher: IEEE

Year: 2014

Author

Jiongjiong Mo , Lind, E. , Wernersson, L.-E. (2)

Zota, C.B. , Wernersson, L.-E. , Lind, E. (2)

Lind, E. (1)

Roll, G. (1)

Wernersson, L.-E. (1)

Zota, C.B. (1)

Publisher

IEEE (5)

Year

2014 (5)

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#x03C0 (1)

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Authentication (1)

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Cellular phones (1)

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Conference Paper (4)

Journal Paper (1)

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English (5)

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Publication Title

evice Research Conference (DRC), 2014 72nd Annual (2)

ndium Phosphide and Related Materials (IPRM), 26th International Conference on (2)

Electron Devices, IEEE Transactions on (1)

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