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Now showing items 1-8 of 8
Realization of 240 nanometer resolution of cell positioning by a virtual flow reduction mechanism
Publisher: IEEE
Year: 2014
Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process
Publisher: IEEE
Year: 2014
A 20-Watt Ka-band GaN high power amplifier MMIC
Publisher: IEEE
Year: 2014