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SiC and GaN devices - wide bandgap is not all the same

Type: Journal Paper

Author : Kaminski, N.; Hilt, O.

Publisher: IET

Year: 2014

Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling

Type: Journal Paper

Author : Vemulapati, Umamaheswara; Kaminski, N.; Silber, Dieter; Storasta, Liutauras; Rahimo, Munaf

Publisher: IET

Year: 2014

Optimisation of the reverse conducting IGBT for zero-voltage switching applications such as induction cookers

Type: Journal Paper

Author : Sheikhian, I.; Kaminski, N.; Voß , Stefan; Scholz, W.; Herweg, E.

Publisher: IET

Year: 2014

Author

Kaminski, N. (3)

, Stefan (1)

Herweg, E. (1)

Hilt, O. (1)

Rahimo, Munaf (1)

Scholz, W. (1)

Sheikhian, I. (1)

Silber, Dieter (1)

Storasta, Liutauras (1)

Vemulapati, Umamaheswara (1)

Publisher

IET (3)

Year

2014 (3)

Keywords

insulated gate bipolar transistors (2)

RC-IGBT (2)

2D device simulations (1)

anode profiles (1)

anode shorts (1)

blocking capability (1)

blocking state (1)

buffer profiles (1)

coil resistance (1)

cooling system (1)

Type

Journal Paper (3)

Language (ISO)

English (3)

Content Type

Metadata Only (3)

Publication Title

Circuits, Devices &amp; Systems, IET (3)

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