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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

Type: Journal Paper

Author : Li-Sheng Wang; Lu Liu; Jing-Ping Xu; Shu-Yan Zhu; Yuan Huang; Pui-To Lai

Publisher: IEEE

Year: 2014

Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

Type: Journal Paper

Author : Feng Ji; Jing-Ping Xu; Yong Huang; Lu Liu; Lai, P.T.

Publisher: IEEE

Year: 2014

Effects of Trapped Charges in Gate Dielectric and High- n ${k}$ n Encapsulation on Performance of MoS2 Transistor

Type: Journal Paper

Author : Jing-Ping Xu; Wen-Xuan Xie; Lu Liu; Xinyuan Zhao; Xingjuan Song; Pui-To Lai; Wing-Man Tang

Year: 2019

Fabrication of PEBA/Cu2O mixed-matrix membranes and their application in pyridine recovery from aqueous solution

Type: Journal Paper

Author : Jian Hua Chen; Zhen Bo Su; Jing Ping Xu; Li Jing Lin; Xin Fei Dong; Qian Peng; Ya San He; Yu Jing Nie

Year: 2017

Author

Jing-Ping Xu (3)

Lu Liu (3)

Pui-To Lai (2)

Feng Ji (1)

Jian Hua Chen (1)

Jing Ping Xu (1)

Lai, P.T. (1)

Li Jing Lin (1)

Li-Sheng Wang (1)

Qian Peng (1)

Publisher

IEEE (2)

Year

2019 (1)

2017 (1)

2014 (2)

Keywords

electrical properties (2)

hafnium compounds (2)

interfacial properties (2)

MOS capacitors (2)

titanium compounds (2)

Al-HfTiON-AlON-GaAs (1)

circuit reliability (1)

defective states (1)

dielectric constant (1)

Dielectrics (1)

Type

Journal Paper (4)

Language (ISO)

English (4)

Content Type

Fulltext (2)

Metadata Only (2)

Publication Title

Electron Devices, IEEE Transactions on (2)

IEEE Transactions on Electron Devices (1)

RSC Adv. (1)

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