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Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs

Type: Journal Paper

Author : Berthou, Maxime; Godignon, P.; Millan, James

Publisher: IEEE

Year: 2014

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing

Type: Conference Paper

Author : Leon, J.; Perpina, X.; Vellvehi, M.; Jorda, X.; Godignon, P.

Publisher: IEEE

Year: 2014

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Type: Journal Paper

Author : Navarro, Luis /A/.; Perpina, Xavier; Godignon, P.; Montserrat, J.; Banu, V.; Vellvehi, Miquel; Jorda, Xavier

Publisher: IEEE

Year: 2014

Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs

Type: Conference Paper

Author : Banu, V.; Godignon, P.; Alexandru, M.; Vellvehi, M.; Jorda, X.; Millan, J.

Publisher: IEEE

Year: 2014

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs

Type: Conference Paper

Author : Florentin, M.; Millan, J.; Godignon, P.; Alexandru, M.; Constant, A.; Schmidt, B.

Publisher: IEEE

Year: 2014

5 MeV Proton and 15 MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters

Type: Journal Paper

Author : Alexandru, M.; Florentin, Matthieu; Constant, Aurore; Schmidt, Benedikt; Michel, Patrice; Godignon, P.

Publisher: IEEE

Year: 2014

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Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs

5 MeV Proton and 15 MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters

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Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs

Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs

A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs

5&#x00A0;MeV Proton and 15&#x00A0;MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters

5 MeV Proton and 15 MeV Electron Radiation Effects Study on 4H-SiC nMOSFET Electrical Parameters