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TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

Type: Journal Paper

Author : Baravelli, E.; Gnani, Elena; Gnudi, A.; Reggiani, S.; Baccarani, G.

Publisher: IEEE

Year: 2014

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Type: Journal Paper

Author : Grassi, Roberto; Gnudi, A.; Di Lecce, Valerio; Gnani, Elena; Reggiani, S.; Baccarani, G.

Publisher: IEEE

Year: 2014

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Type: Journal Paper

Author : Beneventi, Giovanni Betti; Gnani, Elena; Gnudi, A.; Reggiani, S.; Baccarani, G.

Publisher: IEEE

Year: 2014

Total Ionizing Dose Effects in Si-Based Tunnel FETs

Type: Journal Paper

Author : Lili Ding; Gnani, Elena; Gerardin, Simone; Bagatin, Marta; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca; Le Royer, Cyrille; Paccagnella, Alessandro

Publisher: IEEE

Year: 2014

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TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Total Ionizing Dose Effects in Si-Based Tunnel FETs

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TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Total Ionizing Dose Effects in Si-Based Tunnel FETs