Search

Now showing items 1-3 of 3

1–20 Ghz kΩ-range BiCMOS 55 nm reflectometer

Type: Conference Paper

Author : Ferreira, P.M.; Donche, C.; Haddadi, K.; Lasri, T.; Dambrine, G.; Gaquiere, C.; Quemerais, T.; Gloria, D.

Publisher: IEEE

Year: 2014

GaN-based Implanted self switching diodes for THz imaging

Type: Conference Paper

Author : Sangare, P.; Ducournau, G.; Grimbert, B.; Faucher, M.; Iniguez-de-la-Torre, I.; Gonzalez, T.; Mateos, J.; Gaquiere, C.

Publisher: IEEE

Year: 2014

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Type: Conference Paper

Author : Altuntas, P.; Defrance, N.; Lesecq, M.; Agboton, A.; Ouhachi, R.; Okada, E.; Gaquiere, C.; De Jaeger, J.-C.; Frayssinet, E.; Cordier, Y.

Publisher: IEEE

Year: 2014

Search

1–20 Ghz kΩ-range BiCMOS 55 nm reflectometer

GaN-based Implanted self switching diodes for THz imaging

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

Author

Publisher

Year

Keywords

Type

Language (ISO)

Content Type

Publication Title

Search

Filters

1&#x2013;20 Ghz k&#x03A9;-range BiCMOS 55 nm reflectometer

GaN-based Implanted self switching diodes for THz imaging

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

1–20 Ghz kΩ-range BiCMOS 55 nm reflectometer