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Aging and baking effects on the radiation hardness of MOS capacitors

Type: Journal Paper

Author : Karmarkar, A.P.; Choi, B.K.; Schrimpf, R.D.; Fleetwood, D.M.

Year: 2001

Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

Type: Journal Paper

Author : Jiexin Luo; Jing Chen; Zhan Chai; Kai Lu; Weiwei He; Yan Yang; En Xia Zhang; Fleetwood, D.M.; Xi Wang

Publisher: IEEE

Year: 2014

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Type: Journal Paper

Author : Puzyrev, Yevgeniy; Mukherjee, Sayan; Jin Chen; Roy, Tonmoy; Silvestri, M.; Schrimpf, R.D.; Fleetwood, D.M.; Singh, Jaskirat; Hinckley, John M.; Paccagnella, Alessandro; Pantelides, Sokrates T.

Publisher: IEEE

Year: 2014

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

Type: Journal Paper

Author : Fleetwood, Zachary E.; Kenyon, Eleazar W.; Lourenco, Nelson E.; Jain, Sonal; En Xia Zhang; England, Troy D.; Cressler, John D.; Schrimpf, R.D.; Fleetwood, D.M.

Publisher: IEEE

Year: 2014

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Type: Journal Paper

Author : Jin Chen; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, R.D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

Publisher: IEEE

Year: 2014

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Type: Journal Paper

Author : Arora, Rajkumar; Fleetwood, Zachary E.; En Xia Zhang; Lourenco, Nelson E.; Cressler, John D.; Fleetwood, D.M.; Schrimpf, R.D.; Sutton, Akil K.; Freeman, G.; Greene, Brian

Publisher: IEEE

Year: 2014

Soft errors and NBTI in SiGe pMOS transistors

Type: Conference Paper

Author : Fleetwood, D.M.; Zhang, E.X.; Duan, G.X.; Zhang, C.X.; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Schrimpf, R.D.; Reed, R.A.; Linten, D.; Mitard, J.

Publisher: IEEE

Year: 2014

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Type: Journal Paper

Author : Haeffner, T.D.; Loveless, T.D.; Zhang, E.X.; Sternberg, A.L.; Jagannathan, Sarangapani; Schrimpf, R.D.; Kauppila, J.S.; Alles, Michael L.; Fleetwood, D.M.; Massengill, Lloyd W.; Haddad, Nadim F.

Publisher: IEEE

Year: 2014

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Type: Journal Paper

Author : En Xia Zhang; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Funkhouser, Erik D.; Kai Ni; Ball, D.R.; McCurdy, Michael W.; Fleetwood, D.M.; Reed, R.A.; Alles, Michael L.; Schrimpf, R.D.; Linten, D.; Mitard, J.

Publisher: IEEE

Year: 2014

Single-Event Transient Response of InGaAs MOSFETs

Type: Journal Paper

Author : Kai Ni; En Xia Zhang; Hooten, N.C.; Bennett, W.G.; McCurdy, Michael W.; Sternberg, A.L.; Schrimpf, R.D.; Reed, R.A.; Fleetwood, D.M.; Alles, Michael L.; Tae-Woo Kim; Jianqiang Lin; del Alamo, Jesus /A/.

Publisher: IEEE

Year: 2014

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Aging and baking effects on the radiation hardness of MOS capacitors

Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Soft errors and NBTI in SiGe pMOS transistors

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Single-Event Transient Response of InGaAs MOSFETs

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Aging and baking effects on the radiation hardness of MOS capacitors

Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Impact of Technology Scaling in sub-100&#x00A0;nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Soft errors and NBTI in SiGe pMOS transistors

Irradiation and Temperature Effects for a 32&#x00A0;nm RF Silicon-on-Insulator CMOS Process

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Single-Event Transient Response of InGaAs MOSFETs

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process