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    Correlation of threading screw dislocation density to GaN 2-DEG mobility 

    Type: Journal Paper
    Author : Hite, Jennifer K.; Gaddipati, P.; Meyer, D.J.; Mastro, Michael /A/.; Eddy, Charles R.
    Publisher: IET
    Year: 2014

    Process optimization of multicycle rapid thermal annealing of Mg-implanted GaN 

    Type: Conference Paper
    Author : Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Tadjer, Marko J.; Hite, Jennifer K.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.
    Publisher: IEEE
    Year: 2014

    Activation of Mg implanted in GaN by multicycle rapid thermal annealing 

    Type: Journal Paper
    Author : Anderson, Travis J.; Feigelson, Boris N.; Kub, Francis J.; Tadjer, Marko J.; Hobart, Karl D.; Mastro, Michael /A/.; Hite, Jennifer K.; Eddy, Charles R.
    Publisher: IET
    Year: 2014

    Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation 

    Type: Journal Paper
    Author : Anderson, Travis J.; Koehler, Andrew D.; Greenlee, Jordan D.; Weaver, Bradley D.; Mastro, Michael /A/.; Hite, Jennifer K.; Eddy, Charles R.; Kub, Francis J.; Hobart, Karl D.
    Publisher: IEEE
    Year: 2014

    Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors 

    Type: Journal Paper
    Author : Meyer, D.J.; Feygelson, Tatyana /I/.; Anderson, Travis J.; Roussos, Jason /A/.; Tadjer, Marko J.; Downey, Brian P.; Katzer, D. Scott; Pate, Bradford B.; Ancona, Mario G.; Koehler, Andrew D.; Hobart, Karl D.; Eddy, Charles R.
    Publisher: IEEE
    Year: 2014

    Thermionic-Field Emission Barrier Between Nanocrystalline Diamond and Epitaxial 4H-SiC 

    Type: Journal Paper
    Author : Tadjer, Marko J.; Hobart, Karl D.; Anderson, Travis J.; Feygelson, Tatyana /I/.; Myers-Ward, Rachael L.; Koehler, Andrew D.; Calle, F.; Eddy, Charles R.; Gaskill, D. Kurt; Pate, Bradford B.; Kub, Francis J.
    Publisher: IEEE
    Year: 2014

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