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Author : Amlan Majumdar; Yanning Sun; Cheng-Wei Cheng; Young-Hee Kim; Uzma Rana; Ryan M. Martin; Robert L. Bruce; Kuen-Ting Shiu; Yu Zhu; Damon B. Farmer; Marinus Hopstaken; Eric A. Joseph; Joel P. de Souza; Martin M. Frank; Szu-Lin Cheng; Masaharu Kobayashi; Elizabeth A. Duch; Devendra K. Sadana; Dae-Gyu Park; Effendi Leobandung

Year: 2014

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Graphene Electronics: Materials, Devices, and Circuits

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

Graphene Plasmon Enhanced Vibrational Sensing of Surface-Adsorbed Layers

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

CMOS-Compatible Self-Aligned In_0.53Ga_0.47As MOSFETs With Gate Lengths Down to 30 nm

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Graphene Electronics: Materials, Devices, and Circuits

Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

Graphene Plasmon Enhanced Vibrational Sensing of Surface-Adsorbed Layers

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

CMOS-Compatible Self-Aligned In0.53Ga0.47As MOSFETs With Gate Lengths Down to 30 nm

CMOS-Compatible Self-Aligned In_0.53Ga_0.47As MOSFETs With Gate Lengths Down to 30 nm