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Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS

Type: Conference Paper

Author : Asenov, A.

Publisher: IEEE

Year: 2014

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET\'s: A 3-D “atomistic” simulation study

Type: Journal Paper

Author : Asenov, A.

Year: 1998

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Progress in the simulation of time dependent statistical variability in nano CMOS transistors

Type: Conference Paper

Author : Asenov, A.; Amoroso, S.M.; Gerrer, L.

Publisher: IEEE

Year: 2014

Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors

Type: Journal Paper

Author : Markov, S.; Roy, S.; Asenov, A.

Year: 2010

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Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

Type: Conference Paper

Author : Xingsheng Wang; Binjie Cheng; Millar, C.; Reid, D.; Asenov, A.

Publisher: IEEE

Year: 2014

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

Type: Conference Paper

Author : Liping Wang; Brown, A.; Cheng, B.; Asenov, A.

Publisher: IEEE

Year: 2014

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

Type: Journal Paper

Author : Martinez, A.; Bescond, M.; Barker, J.R.; Svizhenko, A.; Anantram, M.P.; Millar, C.; Asenov, A.

Year: 2007

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3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

Type: Conference Paper

Author : Wang, L.; Brown, A.R.; Nedjalkov, M.; Alexander, C.; Cheng, B.; Millar, C.; Asenov, A.

Publisher: IEEE

Year: 2014

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

Type: Conference Paper

Author : Wang, L.; Brown, A.R.; Nedjalkov, M.; Alexander, C.; Cheng, B.; Millar, C.; Asenov, A.

Publisher: IEEE

Year: 2014

3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability

Type: Conference Paper

Author : Gerrer, L.; Amoroso, S.; Hussin, R.; Adamu-Lema, F.; Asenov, A.

Publisher: IEEE

Year: 2014

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Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET\'s: A 3-D “atomistic” simulation study

Progress in the simulation of time dependent statistical variability in nano CMOS transistors

Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors

Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability

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Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET\'s: A 3-D “atomistic” simulation study

Progress in the simulation of time dependent statistical variability in nano CMOS transistors

Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors

Statistical aspects of FinFET based SRAM metrics subject to process and statistical variability

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

3D atomistic simulations of bulk, FDSOI and Fin FETs sensitivity to oxide reliability