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Author : Besnard, G.; Garros, X.; Andrieu, F.; Nguyen, P.; Van Den Daele, W.; Reynaud, P.; Schwarzenbach, W.; Delprat, D.; Bourdelle, K.K.; Reimbold, G.; Cristoloveanu, S.

Publisher: IEEE

Year: 2014

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Type: Journal Paper

Author : Gaillardin, M.; Raine, M.; Duhamel, O.; Girard, S.; Paillet, P.; McMorrow, Dale; Warner, Jeffrey H.; Andrieu, F.; Barraud, S.; Faynot, O.; Roche, Nicholas J.-H

Publisher: IEEE

Year: 2014

Multi- UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

Type: Journal Paper

Author : Noel, J.-P.; Thomas, O.; Jaud, M.; Weber, O.; Poiroux, T.; Fenouillet-Beranger, C.; Rivallin, P.; Scheiblin, P.; Andrieu, F.; Vinet, M.; Rozeau, O.; Boeuf, F.; Faynot, O.; Amara, A.

Year: 2011

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High mobility w-gate nanowire P-FET on cSGOI substrates obtained by Ge enrichment technique

Type: Conference Paper

Author : Nguyen, P.; Barraud, S.; Koyama, M.; Casse, M.; Andrieu, F.; Tabone, C.; Glowacki, F.; Hartmann, J.-M.; Maffini-Alvaro, V.; Rouchon, D.; Bernier, N.; Lafond, D.; Samson, M.-P.; Allain, F.; Vizioz, C.; Delprat, D.; Nguyen, B.-Y.; Mazure, C.; Faynot, O.; Vinet, M.

Publisher: IEEE

Year: 2014

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Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs

Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications

Piezoresistivity in unstrained and strained SOI MOSFETs

CMOS V<inf>T</inf> characterization by capacitance measurements in FDSOI PIN gated diodes

Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - On extraction of self-heating features in UTBB SOI MOSFETs

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Multi- UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

High mobility w-gate nanowire P-FET on cSGOI substrates obtained by Ge enrichment technique

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Overestimation of Short-Channel Effects Due to Intergate Coupling in Advanced FD-SOI MOSFETs

Quasi-double gate regime to boost UTBB SOI MOSFET performance in analog and sleep transistor applications

Piezoresistivity in unstrained and strained SOI MOSFETs

CMOS V<inf>T</inf> characterization by capacitance measurements in FDSOI PIN gated diodes

Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - On extraction of self-heating features in UTBB SOI MOSFETs

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Multi- UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

High mobility w-gate nanowire P-FET on cSGOI substrates obtained by Ge enrichment technique