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SiC and GaN devices - wide bandgap is not all the same

Type: Journal Paper

Author : Kaminski, N.; Hilt, O.

Publisher: IET

Year: 2014

3.7 kV Vertical GaN PN Diodes

Type: Journal Paper

Author : Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui; Bour, David; Prunty, Thomas; Disney, Don

Publisher: IEEE

Year: 2014

On the Use of Front-End Cascode Rectifiers Based on Normally On SiC JFET and Si MOSFET

Type: Journal Paper

Author : Vazquez, A.; Rodriguez, Alex; Fernandez, M.; Hernando, M.M.; Maset, Enrique; Sebastian, J.

Publisher: IEEE

Year: 2014

Dynamics of dry-band arcing on silicone rubber in the inclined plane test under AC, +DC and −DC voltages

Type: Conference Paper

Author : Ghunem, R.A.; Jayaram, S.H.; Cherney, E.A.

Publisher: IEEE

Year: 2014

Author

Bour, David (1)

Cherney, E.A. (1)

Disney, Don (1)

Edwards, Andrew P. (1)

Fernandez, M. (1)

Ghunem, R.A. (1)

Hernando, M.M. (1)

Hilt, O. (1)

Jayaram, S.H. (1)

Kaminski, N. (1)

Publisher

IEEE (3)

IET (1)

Year

2014 (4)

Keywords

Schottky diodes (3)

wide band gap semiconductors (3)

gallium compounds (2)

GaN (2)

SiC (2)

silicon compounds (2)

wide band gap semiconductor devices (2)

ac dc power converters (1)

AC-DC power convertors (1)

active power factor corrector interleaved boost converter (1)

Type

Journal Paper (3)

Conference Paper (1)

Language (ISO)

English (4)

Content Type

Metadata Only (4)

Publication Title

Circuits, Devices &amp; Systems, IET (1)

Electron Device Letters, IEEE (1)

lectrical Insulation and Dielectric Phenomena (CEIDP), 2014 IEEE Conference on (1)

Power Electronics, IEEE Transactions on (1)

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