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On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET
are considered. The parameters include gate voltage dependency, short channel effects, and poly gate length dependency. The results presented here are not only very useful for accurate device modeling and characterization, but are also vital to better...
Extracting voltage-dependent series resistance of single diode model for organic solar cells
In this paper, a modified equivalent circuit model is proposed to elucidate the electrical behavior of Organic Solar Cells (OSCs). In this way, this single diode model uses a voltage-dependent series resistance to enhance the modeling accuracy while...
Asynchronous MAC protocol for spectrum agility in Wireless Body Area Sensor Networks
An extended drain current conductance extraction method and its application to DRAM support and array devices
In this paper an extended drain-current conductance method is introduced, which can be used for extraction of separated drain and source resistors, forward and reversed modes carrier mobilities and effective channel length ...