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Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

Type: Journal Paper

Author : Kai Sun; Hongfei Wu; Juejing Lu; Yan Xing; Lipei Huang

Publisher: IEEE

Year: 2014

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

Type: Journal Paper

Author : Jordan, Jose; Esteve, Vicente; Sanchis-Kilders, Esteban; Dede, Enrique J.; Maset, Enrique; Ejea, Juan B.; Ferreres, Agustin

Publisher: IEEE

Year: 2014

Datasheet Driven Silicon Carbide Power MOSFET Model

Type: Journal Paper

Author : Mudholkar, Mihir; Ahmed, Shehab; Ericson, M. Nance; Frank, S. Shane; Britton, Charles L.; Mantooth, Homer Alan

Publisher: IEEE

Year: 2014

Design and simulation of intelligent brake system based on MATLAB and ADAMS

Type: Conference Paper

Publisher: IEEE

Year: 2014

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Type: Conference Paper

Publisher: IEEE

Year: 2014

Solid-State Bipolar Marx Modulator Modeling

Type: Journal Paper

Author : Canacsinh, Hiren; Redondo, L.M.; Silva, Jorge F.; Schamiloglu, Edl

Publisher: IEEE

Year: 2014

A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors

Type: Journal Paper

Author : Tolstoy, Georg; Peftitsis, Dimosthenis; Rabkowski, Jacek; Palmer, Patrick R.; Nee, H.-P.

Publisher: IEEE

Year: 2014

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

Type: Journal Paper

Author : Zheng Chen; Yiying Yao; Boroyevich, Dushan; Ngo, Khai D. T.; Mattavelli, Paolo; Rajashekara, Kaushik

Publisher: IEEE

Year: 2014

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

Type: Journal Paper

Author : Wu, Y.-F.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, Brian

Publisher: IEEE

Year: 2014

High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

Type: Journal Paper

Author : Anthony, Philip; McNeill, Neville; Holliday, Derrick

Publisher: IEEE

Year: 2014

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Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

Datasheet Driven Silicon Carbide Power MOSFET Model

Design and simulation of intelligent brake system based on MATLAB and ADAMS

Welcome messages

Solid-State Bipolar Marx Modulator Modeling

A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

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Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

Datasheet Driven Silicon Carbide Power MOSFET Model

Design and simulation of intelligent brake system based on MATLAB and ADAMS

Welcome messages

Solid-State Bipolar Marx Modulator Modeling

A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

kV-Class GaN-on-Si HEMTs Enabling 99&#x0025; Efficiency Converter at 800&#x00A0;V and 100&#x00A0;kHz

High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz