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Al2O3 Potential as a Gate Dielectric of the Next Nano MISFET Transistor
Year: 2009
Abstract:
The current gate dielectric thickness of MOSFET (metal- oxide-semiconductor-field-effect-transistor) is down to 1 nm which can not prevent boron diffusion from electrodes through the ultra thin gate oxide.
Experimental study on thermal analysis of a novel shell and tube heat exchanger with corrugated tubes
Year: 2019
Abstract:
In this paper, a novel study on the heat transfer characteristics in a shell and tube heat exchanger with wavy cosine
corrugated wall in structure of tube bundle is investigated experimentally. The optimization procedure ...
Guided Mode Resonance Sensor With Enhanced Surface Sensitivity Using Coupled Cross-Stacked Gratings
Publisher: IEEE
Year: 2014