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A 2-D Analytical Model for Double-Gate Tunnel FETs
Year: 2014
Abstract:
is extracted by analytically integrating the band-to-band tunneling
generation rate over the tunneling region. The model well predicts the potential, subthreshold swing (SS), and transfer and output characteristics of DG TFETs. We analyze the dependence...
A Novel Fin Electron–Hole Bilayer Tunnel Field-Effect Transistor
Publisher: IEEE
Year: 2014
Introduction to the Soft Computing and Intelligent Data Analysis Minitrack
Publisher: IEEE
Year: 2014