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RISA Novel Double Gate Tunnel Field Effect Transistor with 9 mV/dec Average Subthreshold Slope
Year: 2014
Abstract:
×1012) and an average subthreshold slope of about 9 mV/decade over 4 decades of current at room temperature. Results suggest that, the DGTFET with p+-layer in the channel seem to be the most optimal ones to replace MOSFET for ultralow power applications and switching...
New trends in content delivery networks
Publisher: IEEE
Year: 2014
Integrated design and control of hypersonic vehicles
Publisher: IEEE
Year: 2014
An approach for scalable parallel execution of ant algorithms
Publisher: IEEE
Year: 2014
A new extraction method of extrinsic elements of GaAs/GaN HEMTs
Publisher: IEEE
Year: 2014
Substrate Bias Influence on the Operation of Junctionless Nanowire Transistors
Publisher: IEEE
Year: 2014
Rapid labelling of SCADA data to extract transparent rules using RIPPER
Publisher: IEEE
Year: 2014
SLA-Based Profit Optimization in Cloud Bursting PaaS
Publisher: IEEE
Year: 2014
Nighttime Vehicle Detection at Close Range Using Vehicle Lamps Information
Publisher: IEEE
Year: 2014
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current
Publisher: IEEE
Year: 2014