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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Type: Journal Paper

Author : Anderson, Travis J.; Feigelson, Boris N.; Kub, Francis J.; Tadjer, Marko J.; Hobart, Karl D.; Mastro, Michael /A/.; Hite, Jennifer K.; Eddy, Charles R.

Publisher: IET

Year: 2014

SPICE model of thyristors with amplifying gate and emitter-shorts

Type: Journal Paper

Author : Zekry, Abdelhalim /A/.; Sayah, Gihan Taha; Soliman, Fouad /A/.

Publisher: IET

Year: 2014

Time-varying IIR multi-notch filter based on all-pass filter prototype

Type: Conference Paper

Author : Kocon, Slawomir; Piskorowski, Jacek

Publisher: IEEE

Year: 2014

Effect of manganese doping on optical and magnetic properties of titanium dioxide nanostructures prepared by hydrothermal technique in the presence of thiourea

Type: Journal Paper

Author : Zamiri, Golnoush; Zakaria, A.; Hussein, M.Z.B.; Zamiri, R.; Rebelo, A.; Abbastabar Ahangar, H.

Publisher: IET

Year: 2014

Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

Type: Journal Paper

Author : Kumar, Ajit; Kumar, Vipin; Agarwal, Sankalp; Basak, Abhishek; Jain, Nikhil; Bulusu, Anand; Manhas, Sanjeev Kumar

Publisher: IEEE

Year: 2014

Circuit-Level Simulation of a CNTFET With Unevenly Positioned CNTs by Linear Programming

Type: Journal Paper

Author : Geunho Cho; Lombardi, Floriana

Publisher: IEEE

Year: 2014

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Type: Journal Paper

Author : Lin, Tyrone T.; Young, S.L.; Kung, C.Y.; Chen, H.Z.; Kao, M.C.; Chang, M.C.; Ou, C.R.

Publisher: IEEE

Year: 2014

Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm <formula formulatype="inline"> <img src="/images/tex/20705.gif" alt="^{\\bf 2}"> </formula> n-Type CZ Substrate

Type: Journal Paper

Author : Yuguo Tao; Young-Woo Ok; Zimbardi, Francesco; Upadhyaya, Ajay D.; Jiun-Hong Lai; Ning, Sheyang; Upadhyaya, Vijaykumar D.; Rohatgi, Ajeet

Publisher: IEEE

Year: 2014

Two-Dimensional Numerical Model and Turn-On Performance Simulation of Reversely Switched Dynistor

Type: Journal Paper

Author : Lin Liang; Quan Wei; Yuehui Yu

Publisher: IEEE

Year: 2014

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

Type: Journal Paper

Author : Dong-Il Moon; Jee-Yeon Kim; Joon-Bae Moon; Dong-Oh Kim; Yang-Kyu Choi

Publisher: IEEE

Year: 2014

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

SPICE model of thyristors with amplifying gate and emitter-shorts

Time-varying IIR multi-notch filter based on all-pass filter prototype

Effect of manganese doping on optical and magnetic properties of titanium dioxide nanostructures prepared by hydrothermal technique in the presence of thiourea

Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

Circuit-Level Simulation of a CNTFET With Unevenly Positioned CNTs by Linear Programming

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm <formula formulatype="inline"> <img src="/images/tex/20705.gif" alt="^{\\bf 2}"> </formula> n-Type CZ Substrate

Two-Dimensional Numerical Model and Turn-On Performance Simulation of Reversely Switched Dynistor

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

SPICE model of thyristors with amplifying gate and emitter-shorts

Time-varying IIR multi-notch filter based on all-pass filter prototype

Effect of manganese doping on optical and magnetic properties of titanium dioxide nanostructures prepared by hydrothermal technique in the presence of thiourea

Nitrogen-Terminated Semiconducting Zigzag GNR FET With Negative Differential Resistance

Circuit-Level Simulation of a CNTFET With Unevenly Positioned CNTs by Linear Programming

Variable-Range Hopping and Thermal Activation Conduction of Y-Doped ZnO Nanocrystalline Films

Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm <formula formulatype="inline"> <img src="/images/tex/20705.gif" alt="^{\\bf 2}"> </formula> n-Type CZ Substrate

Two-Dimensional Numerical Model and Turn-On Performance Simulation of Reversely Switched Dynistor

Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel