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A High Density 250<inline-formula> <img src="/images/tex/21629.gif" alt="^{\\circ}{\\rm C}"> </inline-formula> Junction Temperature SiC Power Module Development

Type: Journal Paper

Author : Puqi Ning; Fei Wang; Di Zhang

Publisher: IEEE

Year: 2014

Considerations for sending a breaker trip command over great distances for the purpose of arc flash mitigation

Type: Conference Paper

Author : Proctor, M.

Publisher: IEEE

Year: 2014

SiC and GaN devices - wide bandgap is not all the same

Type: Journal Paper

Author : Kaminski, N.; Hilt, O.

Publisher: IET

Year: 2014

The study of electromagnetic transient simulation in whole scene intelligent substation test method

Type: Conference Paper

Author : Wang Biao

Publisher: IEEE

Year: 2014

Triangular FM Based Discrete Frequency-Coding Waveform Sets

Type: Conference Paper

Author : Qazi, Farhan A.

Publisher: IEEE

Year: 2014

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Type: Journal Paper

Author : Navarro, Luis /A/.; Perpina, Xavier; Godignon, P.; Montserrat, J.; Banu, V.; Vellvehi, Miquel; Jorda, Xavier

Publisher: IEEE

Year: 2014

Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module

Type: Journal Paper

Author : Shengnan Li; Tolbert, Leon M.; Fei Wang; Fang Zheng Peng

Publisher: IEEE

Year: 2014

Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging

Type: Journal Paper

Author : Locatelli, M.-L.; Khazaka, Rami; Diaham, S.; Cong-Duc Pham; Bechara, M.; Dinculescu, Sorin; Bidan, Pierre

Publisher: IEEE

Year: 2014

Mechanism of Migration of Sintered Nanosilver at High Temperatures in Dry Air for Electronic Packaging

Type: Journal Paper

Author : Guo-Quan Lu; Wen Yang; Yun-Hui Mei; Xin Li; Gang Chen; Xu Chen

Publisher: IEEE

Year: 2014

Modeling the Influence of Selected Factors on Thermal Resistance of Semiconductor Devices

Type: Journal Paper

Author : Gorecki, Krzysztof; Zarebski, Janusz

Publisher: IEEE

Year: 2014

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A High Density 250<inline-formula> <img src="/images/tex/21629.gif" alt="^{\\circ}{\\rm C}"> </inline-formula> Junction Temperature SiC Power Module Development

Considerations for sending a breaker trip command over great distances for the purpose of arc flash mitigation

SiC and GaN devices - wide bandgap is not all the same

The study of electromagnetic transient simulation in whole scene intelligent substation test method

Triangular FM Based Discrete Frequency-Coding Waveform Sets

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module

Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging

Mechanism of Migration of Sintered Nanosilver at High Temperatures in Dry Air for Electronic Packaging

Modeling the Influence of Selected Factors on Thermal Resistance of Semiconductor Devices

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A High Density 250<inline-formula> <img src="/images/tex/21629.gif" alt="^{\\circ}{\\rm C}"> </inline-formula> Junction Temperature SiC Power Module Development

Considerations for sending a breaker trip command over great distances for the purpose of arc flash mitigation

SiC and GaN devices - wide bandgap is not all the same

The study of electromagnetic transient simulation in whole scene intelligent substation test method

Triangular FM Based Discrete Frequency-Coding Waveform Sets

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Stray Inductance Reduction of Commutation Loop in the P-cell and N-cell-Based IGBT Phase Leg Module

Evaluation of Encapsulation Materials for High-Temperature Power Device Packaging

Mechanism of Migration of Sintered Nanosilver at High Temperatures in Dry Air for Electronic Packaging

Modeling the Influence of Selected Factors on Thermal Resistance of Semiconductor Devices