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RISComparison of Electron Scattering Mechanisims and Electron Mobility in AlN and GaN at Low Electric Field Application
Iterative technique is used to solve Boltzmann
transport equation in bulk wurtzite phase GaN and AlN at
central valley conduction band. The electron mobility is
calculated as a function of temperature ...
Comparison of Low Field Electron Transport Properties in CdTe and HgCdTe Semiconductors
Electron mobility in CdTe and HgCdTe are
calculated, by solving Boltzmann equation using iteration
model, as a function of temperature for carrier
concentrations of 1016, 1017, and 1018 cm-3. Both CdTe ...
Calculation of High Field Electron Transport Properties in GaSb and GaAs
model that includes numerical formulations
of the phonon scattering rates and ionized impurity
scattering rates. For two materials, we find that electron
velocity overshoot only occurs when the electric field in
increased to a...
Calculation of High Field Electron Transport Properties in InN in Comparison with GaN
valleys ensemble
Monte Carlo model that includes numerical formulations
of the phonon scattering rates and ionized impurity
scattering rates. For two materials, we find that electron
velocity overshoot only...
Comparison of Low Field Electron Transport Properties in InN and GaN Semiconductors by Solving Boltzmann Equation Using Iteration Model
mobility in GaN and InN are
calculated, by solving Boltzmann equation using iteration
model, as a function of temperature for carrier
concentrations of 1016, 1017, and 1018 cm-3. Both GaN and
InN ...
Numerical calculation of the electron mobility in ZnS and ZnSe semiconductors using the iterative method
The electron mobility of ZnS and ZnSe semiconductor compounds were calculated by using the
iteration method. We considered polar optical phonon scattering, deformation potential acoustic,
piezoelectric and ionized impurity scattering...
Two-dimensional particle modeling of submicrometer ZnO MESFET based on an ensemble Monte Carlo calculation including five-valley band structure model
been investigated. The following scattering mechanisms, that is
impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are included in the calculation.
Ionized impurity scattering has been treated beyond the born...
Two-Dimensional Particle Modeling of Submicrometer ZnO MESFET Based on an Ensemble Monte Carlo Calculation Including Five-valley Band Structure Model
. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using the phase-shift analysis...
Electron-Plasmon Scattering Effect on Hot Electron Transport Properties in ZnO
A Monte Carlo method has been developed for the study of electron transport
properties in ZnO taking into account the electron-plasmon scattering effect. It is shown that
electron-plasmon scattering affects ...
Hot Electron Transport Properties in Characteristics of Wurtzite GaN MESFETs Using a Five-valley Model
Ensemble Monte Carlo simulations have been carried out to investigate the effects of upper valleys on the characteristics of wurtzite GaN MESFETs. Electronic states within the conduction band valleys at the G1, U,M, G3 and ...