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Thermoelectric power and resistivity of Nd1-xPrxBa2Cu3O7-d
Year: 2001
Abstract:
, and the cell volume suggest that the Pr ions have a valence close to 4 at low doping concentration. The room temperature resistivity indicates that hole concentration decreases with increasing Pr doping. The room temperature thermoelectric power is positive...
Achieving low latency and energy consumption by 5G TDD mode optimization
Publisher: IEEE
Year: 2014
Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells
Publisher: IEEE
Year: 2014
Ferromagnetic GaMnP Prepared by Ion Implantation and Pulsed Laser Annealing
Publisher: IEEE
Year: 2014
A computer aided system for breast cancer detection and diagnosis
Publisher: IEEE
Year: 2014
Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process
Publisher: IEEE
Year: 2014
Working Principles of a DRAM Cell Based on Gated-Thyristor Bistability
Publisher: IEEE
Year: 2014
Building a dataset of sensitive information
Publisher: IEEE
Year: 2014
Permission-combination-based scheme for Android mobile malware detection
Publisher: IEEE
Year: 2014