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Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range

Type: Journal Paper

Author : Kai Sun; Hongfei Wu; Juejing Lu; Yan Xing; Lipei Huang

Publisher: IEEE

Year: 2014

A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter

Type: Journal Paper

Author : Jordan, Jose; Esteve, Vicente; Sanchis-Kilders, Esteban; Dede, Enrique J.; Maset, Enrique; Ejea, Juan B.; Ferreres, Agustin

Publisher: IEEE

Year: 2014

Modeling of a Buck Converter With a SiC JFET to Predict EMC Conducted Emissions

Type: Journal Paper

Author : Rondon-Pinilla, Eliana; Morel, Florent; Vollaire, Christian; Schanen, J.-L.

Publisher: IEEE

Year: 2014

High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

Type: Journal Paper

Author : Anthony, Philip; McNeill, Neville; Holliday, Derrick

Publisher: IEEE

Year: 2014

Author

Anthony, Philip (1)

Dede, Enrique J. (1)

Ejea, Juan B. (1)

Esteve, Vicente (1)

Ferreres, Agustin (1)

Holliday, Derrick (1)

Hongfei Wu (1)

Jordan, Jose (1)

Juejing Lu (1)

Kai Sun (1)

Publisher

IEEE (4)

Year

2014 (4)

Keywords

SiC (4)

silicon compounds (4)

wide band gap semiconductors (4)

gate resistor (3)

MOSFET (3)

voltage 1200 V (3)

Logic gates (2)

Silicon carbide (2)

Switching loss (2)

buck converter prototype (1)

Type

Journal Paper (4)

Language (ISO)

English (4)

Content Type

Metadata Only (4)

Publication Title

Power Electronics, IEEE Transactions on (3)

Industry Applications, IEEE Transactions on (1)

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